::: Á¤º¸Åë½Å¼ÒÀÚ¿¬±¸½Ç :::
Home > ¿¬±¸½ÇÀû > ±¹Á¦³í¹®Áö

³» ¿ë º¸ ±â
³í¹®Áö¸í  Vacuum
¹ßÇà³âµµ  2009.09
³í¹®Á¦¸ñ
Effect of N2O/SiH4 flow ratios on properties of amorphous silicon oxide thin films deposited by inductively-coupled plasma chemical vapor deposition with application to silicon surface passivation
÷ºÎÆÄÀÏ
  Effect_of_N2O.pdf (397.0 KB) Download : 60
ÀÌÀü±Û | Journal of The Electrochemical Society ICDL   2010/09/07
´ÙÀ½±Û | Journal of The Electrochemical Society ICDL   2010/09/07

°æ±âµµ ¼ö¿ø½Ã Àå¾È±¸ õõµ¿ 300 ¼º±Õ°ü´ëÇб³ Á¤º¸Åë½Å°øÇкÎ(440-746) | ¿¬¶ôó : 031-290-7139 | Fax : 031-290-7159
¿¬±¸½Ç : Á¦1°øÇаü 2Ãþ 23213È£ | ¿¬¶ôó : 031-290-7174 | Fax : 031-290-7159
copyright (c) 2001-2009 ICDL. All rights reserved.