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50 |
IEEE ELECTRON DEVICE LETTERS |
2010.09 |
Nanocrystalline-Silicon Thin-Film Nonvolatile Memory Devices for Display Applications
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49 |
Thin Solid Films |
2010.09 |
Metal silicide-templated growth of quality Si films for Schottky-diodes |
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48 |
Materials Chemistry and Physics |
2010.08 |
Intercalation of polyoxomolybdate in polyaniline matrix: Enhancement in AC impedance and gas sensing properties
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47 |
SEMICONDUCTOR SCIENCE AND TECHNOLOGY |
2010.07 |
Embedded nonvolatile memory devices with various silicon nitride energy band gaps on glass used for flat panel display applications |
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46 |
J.Mater.Res |
2010.05 |
Effects of the pyromellitic dianhydride cathode interfacial layer on characteristics of organic solar cells based on poly(3-hexylthiophene-2,5-diyl) and [6,6]-phenyl C61 butyric acid
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45 |
Current Applied Physics |
2010.05 |
rf-Magnetron sputtered ITO thin films for improved heterojunction solar cell applications
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44 |
Materials Science and Engineering B |
2010.03 |
High charge storage of poly-Si thin film nonvolatile memory devices with oxide–silicon–oxynitride stack structures |
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43 |
Solar Energy |
2010.03 |
Simulation and study of the influence of the buffer intrinsic layer,back-surface field, densities of interface defects, resistivity of p-type silicon substrate and transparent conductive oxide on heterojunction with intrinsic thin-layer (HIT) solar cell
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42 |
Thin Solid Films |
2010.03 |
Optical and electrical properties of 2 wt.% Al2O3-doped ZnO films and characteristics of Al-doped ZnO thin-film transistors with ultra-thin gate insulators |
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41 |
Solar Energy Materials & Solar Cells |
2010.02 |
The effect of firing temperature profiles for the high efficiency of crystalline Si solar cells |
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