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40 Journal of physics D-applied physics 2010.02
High performance nonvolatile memory using SiO2/SiOx/SiOxNy stack on excimer laser-annealed polysilicon and the effect of blocking thickness on operation voltage
39 Microelectronic Engineering 2010.02
The metal-induced crystallization of poly-Si and the mobility enhancement of thin film transistors fabricated on a glass substrate
38 Journal of The Electrochemical Society 2009.12
SiO2 Films Deposited by APCVD with a TEOS/Ozone Mixture and Its Application to the Gate Dielectric of TFTs
Vacuum 2009.09
Effect of N2O/SiH4 flow ratios on properties of amorphous silicon oxide thin films deposited by inductively-coupled plasma chemical vapor deposition with application to silicon surface passivation
36 Journal of The Electrochemical Society 2009.08
Embedded NVM Devices with Solid-Phase Crystallized Poly-Si Film on a Glass Substrate for System-on-Panel Applications
35 Japanese Journal of Applied Physics 2009.06
Hydrogenated Amorphous Silicon Layer Formation
by Inductively Coupled Plasma Chemical Vapor Deposition and Its Application for Surface Passivation of p-Type Crystalline Silicon
34 Applied Surface Science 2009.05
Raman scattering analysis of the residual stress in metal-induced crystallized amorphous silicon thin films using nickel
33 Thin Solid Films 2009.05
Fabrication of polycrystalline silicon thin films on glass substrates using fiber laser crystallization
32 Thin Solid Films 2009.05
Comparative study of electro-physical properties of heterostructures containing PECVD nanocrystalline and anodic porous silicon layers
31 Journal of the Korean Physical Society 2009.04
Memory Characteristics of MNNOS Capacitors with
Various Energy Band Gaps of Silicon Nitride
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