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N 학술대회명 발행년도 논문제목 PDF
72 ICAMD2007 2007.12
Memory characteristics of AI/SiNx/a-Si/SiON/Si(MIS) fabricated by ICPECVD
71 ICAMD2007 2007.12
Charge Storage Properties and Trap Site Control of SiNx films for Nonvolatile Memory
70 ICAMD2007 2007.12
Investigate on the Charge Storage Capability of Silicon for SIO2/SI/SiOxNy  Structure Memory on Glass Formed by ICP-CVD
69 ICAMD2007 2007.12
Fabrication and Characterization of TFT using ozone/TEOS process at Low Temperature for application to Non-Volatile Memory on Glass
68 ICAMD2007 2007.12
Aluminum Oxide Thin Films as Top Blocking Layer by using RF Sputtering for Non Volatile Memory
67 EMRS2008 2008.05
Characteristics of Charge Storage and Trap Sites of Silicon Nitride films for Nonvolatile Memory
66 EMRS2008 2008.05
Memory characteristics of SiNX/a-Si /SiON fabricated on glass by ICP-CVD
65 EMRS2008 2008.05
Electrical Properties of Low Temperature Polysilicon TFT  by Using APCVD with TEOS/Ozone
64 EMRS2008 2008.05
Fabrication of Non-Volatile Memory Devices on Glass using Al2O3 Thin Films as a Top Blocking Layer
63 EMRS2008 2008.05
Aluminum Oxide Thin Films as type of Top Blocking Layer by using RF sputtering for Non Volatile Memory
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