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									[2019.05] Effects of post-metallisation annealing on surface–interfacial and electrical properties of HfO2/Ge stacks modified in situ with SiO2 interfacial layer
								

								

									
										

											

												작성자: 관리자
												
																																					조회: 2292													등록일: 2022-03-21												
											

																					

											
								

								

									
								

								

								
									

									

									
									
										
							

							

								
						

						

							
				

				

					
						

							

								
									

									

										
												
												
											

									

										
							

						

							
				

			

				
	

	

		
			
			

        

         
      

				

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					  이전글
					 [2019.05] Electrical and Structural Characteristics of Excimer Laser-Crystallized Polycrystalline Si1-xGex Thin-Film Transistors
				

				

					   다음글
					 [2019.05] The Characteristics of Transparent Non-Volatile Memory Devices Employing Si-Rich SiOX as a Charge Trapping Layer and Indium-Tin-Zinc-Oxide
				

				

				

			

				
	

	

		
			

				
				

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	208
	
	[2017.05] Development of highly conducting n-type micro-crystalline silicon oxide thin film and its ...
	관리자
	
	
	2281
	2022-03-21




	


	207
	
	[2017.08] Improved efficiency of perovskite-silicon tandem solar cell near the matched optical absor...
	관리자
	
	
	2272
	2022-03-21




	


	206
	
	[2019.02] Structure and electrical properties of boron doped hydrogenated mixed-phase silicon films ...
	관리자
	
	
	2269
	2022-03-21




	


	205
	
	[2016.11] Al2O3/SiON stack layers for effective surface passivation and anti-reflection of high effi...
	관리자
	
	
	2248
	2022-03-21




	


	204
	
	[2016.10] Improved Data Retention of InSnZnO Nonvolatile Memory by H2O2 Treated Al2O3 Tunneling Laye...
	관리자
	
	
	2245
	2022-03-21




	


	203
	
	[2019.03] Investigation of p-type nanocrystalline silicon oxide thin film prepared at various growth...
	관리자
	
	
	2239
	2022-03-21




	


	202
	
	[2016.05] The effect of small pyramid texturing on the enhanced passivation and efficiency of single...
	관리자
	
	
	2221
	2022-03-21




	


	201
	
	[2017.04] Investigation of 3-dimensional structural morphology for enhancing light trapping with con...
	관리자
	
	
	2221
	2022-03-21




	


	200
	
	[2016.11] Development of p-Type Nano Crystalline Si Film for Electrical Contact Layer with the Front...
	관리자
	
	
	2218
	2022-03-21




	


	199
	
	[2016.11] Fabrication and Characteristics of High Mobility InSnZnO Thin Film Transistors
	관리자
	
	
	2212
	2022-03-21




	


	198
	
	[2017.04] Fabrication of honeycomb textured glass substrate and nanotexturing of zinc oxide front el...
	관리자
	
	
	2212
	2022-03-21




	


	197
	
	[2016.07] Role of SiOxNy surface passivation layer on stability improvement and kink effect reductio...
	관리자
	
	
	2210
	2022-03-21




	


	196
	
	[2016.08] Silicon germanium active layer with graded band gap and µc-Si:H buffer layer for high...
	관리자
	
	
	2157
	2022-03-21




	


	195
	
	[2017.02] Role of a-Si:H buffer layer at the p/i interface and band gap profiling of the absorption ...
	관리자
	
	
	2156
	2022-03-21




	


	194
	
	[2016.05] Influence of Oxygen Gas Ratio on the Properties of Aluminum-Doped Zinc Oxide Films Prepare...
	관리자
	
	
	2110
	2022-03-21




	

				
				

				

				

				

					
						

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