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									[2012.04] Operation mechanism of Schottky barrier nonvolatile memory with high conductivity InGaZnO active layer
								

								

									
										

											

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																																					조회: 1665													등록일: 2022-03-14												
											

																					

											
								

								

									
								

								

								
									

									

									
									
										
							

							

								
						

						

							
				

				

					
						

							

								
									

									

										
												
												
											

									

										
							

						

							
				

			

				
	

	

		
			
			

        

         
      

				

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					  이전글
					 [2012.04] Front-side metal electrode optimization using fine line double screen printing and nickel plating for large area crystalline silicon solar cells
				

				

					   다음글
					 [2012.04] Spectroscopic ellipsometry analysis of amorphous silicon thin films for Si-nanocrystals
				

				

				

			

				
	

	

		
			

				
				

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	163
	
	[2011.05] Optimization of Selective Emitter Fabrication Method for Solar Cells Using a Laser Groovin...
	관리자
	
	
	1734
	2022-03-11




	


	162
	
	[2013.12] Low temperature deposited transparent conductive ITO and IZTO films for flat panel display...
	관리자
	
	
	1734
	2022-03-18




	


	161
	
	[2013.12] Reduction of Tail State on Boron Doped Hydrogenated Amorphous Silicon Oxide Films Prepared...
	관리자
	
	
	1734
	2022-03-18




	


	160
	
	[2023.03] Integration of Subcells in III-V//Si Tandem Solar Cells
	관리자
	
	
	1733
	2023-12-18




	


	159
	
	[2014.05] Performance of hetero junction with intrinsic thin-layer solar cell depending upon contact...
	관리자
	
	
	1731
	2022-03-18




	


	158
	
	[2015.04] Role of Schottky barrier height at source/drain contact for electrical improvement in high...
	관리자
	
	
	1730
	2022-03-21




	


	157
	
	[2014.05] RF magnetron sputtered ITO:Zr thin films for the high efficiency a-Si:H/c-Si heterojunctio...
	관리자
	
	
	1726
	2022-03-18




	


	156
	
	[2013.08] Bias–stress-induced threshold voltage shift dependence of negative charge trapping i...
	관리자
	
	
	1724
	2022-03-18




	


	155
	
	[2014.01] Influence of high work function ITO:Zr films for the barrier height modification in a-Si:H...
	관리자
	
	
	1723
	2022-03-18




	


	154
	
	[2014.05] Role of the buffer solution in the chemical deposition of CdS films for CIGS solar cell ap...
	관리자
	
	
	1721
	2022-03-18




	


	153
	
	[2014.06] Free-carrier absorption and Burstein–Moss shift effect on quantum efficiency in hete...
	관리자
	
	
	1721
	2022-03-18




	


	152
	
	[2015.06] High performance non-volatile memory with the control of charge trapping states in an amor...
	관리자
	
	
	1721
	2022-03-21




	


	151
	
	[2023.08] Real-Time ITO Layer Thickness for Solar Cells Using Deep Learning and Optical Interference...
	관리자
	
	
	1721
	2023-12-18




	


	150
	
	[2015.07] Study of metal assisted anisotropic chemical etching of silicon for high aspect ratio in c...
	관리자
	
	
	1720
	2022-03-21




	


	149
	
	[2014.11] Solution-based synthesis of high yield CZTS (Cu2ZnSnS4) spherical quantum dots
	관리자
	
	
	1717
	2022-03-21




	

				
				

				

				

				

					
						

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