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[2011.08] Electrical mechanism analysis of Al2O3 doped zinc oxide thin films deposited by rotating cylindrical DC magnetron sputtering
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  이전글  [2011.08] Fabrication of SiO2/SiOx/SiOxNy Non-Volatile Memory with Transparent Amorphous Indium Gallium Zinc Oxide Channels
  다음글  [2011.08] Double layer SiNx:H films for passivation and anti-reflection coating of c-Si solar cells
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