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									[2019.05] Effects of post-metallisation annealing on surface–interfacial and electrical properties of HfO2/Ge stacks modified in situ with SiO2 interfacial layer
								

								

									
										

											

												작성자: 관리자
												
																																					조회: 2297													등록일: 2022-03-21												
											

																					

											
								

								

									
								

								

								
									

									

									
									
										
							

							

								
						

						

							
				

				

					
						

							

								
									

									

										
												
												
											

									

										
							

						

							
				

			

				
	

	

		
			
			

        

         
      

				

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					  이전글
					 [2019.05] Electrical and Structural Characteristics of Excimer Laser-Crystallized Polycrystalline Si1-xGex Thin-Film Transistors
				

				

					   다음글
					 [2019.05] The Characteristics of Transparent Non-Volatile Memory Devices Employing Si-Rich SiOX as a Charge Trapping Layer and Indium-Tin-Zinc-Oxide
				

				

				

			

				
	

	

		
			

				
				

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	268
	
	[2019.04] Effects of post deposition annealing atmosphere on interfacial and electrical properties o...
	관리자
	
	
	2550
	2022-03-21




	


	267
	
	[2019.12] Analysis of Cement Deterioration in Outdoor High-Voltage Insulator
	관리자
	
	
	2548
	2022-03-21




	


	266
	
	[2019.07] Enhancement in Performance of Transparent p-NiO/n-ZnO Heterojunction Ultrafast Self-Powere...
	관리자
	
	
	2530
	2022-03-21




	


	265
	
	[2019.10] Theoretical investigation of transparent front surface field layer on the performance of h...
	관리자
	
	
	2529
	2022-03-21




	


	264
	
	[2020.03] The light-trapping effect in various textured cover glass for enhancing the current densit...
	관리자
	
	
	2528
	2022-03-21




	


	263
	
	[2019.08] Novel synthesis method for quaternary Cd(Cu, Zn)Se thin films and its characterizations
	관리자
	
	
	2525
	2022-03-21




	


	262
	
	[2019.12] In Situ Process to Form Passivated Tunneling Oxides for Front-Surface Field in Rear-Emitte...
	관리자
	
	
	2523
	2022-03-21




	


	261
	
	[2019.01] Improvement of Electrical Performance in P-Channel LTPS Thin-Film Transistor with a-Si:H S...
	관리자
	
	
	2522
	2022-03-21




	


	260
	
	[2019.11] Controlling a crystalline seed layer for mirocrystalline silicon oxide window layer in rea...
	관리자
	
	
	2520
	2022-03-21




	


	259
	
	[2018.07] Improved Electrical Performance of Low-Temperature-Cured Silver Electrode for Silicon Hete...
	관리자
	
	
	2512
	2022-03-21




	


	258
	
	[2018.10] Efficient light trapping for maskless large area randomly textured glass structures with v...
	관리자
	
	
	2510
	2022-03-21




	


	257
	
	[2018.10] High-performing ultrafast transparent photodetector governed by the pyro–phototronic...
	관리자
	
	
	2508
	2022-03-21




	


	256
	
	[2018.10] Effects of tunneling dielectrics formed by CO2 and N2O plasma-assisted oxidations on memor...
	관리자
	
	
	2506
	2022-03-21




	


	255
	
	[2018.05] Reduction in Photocurrent Loss and Improvement in Performance of Single Junction Solar Cel...
	관리자
	
	
	2502
	2022-03-21




	


	254
	
	[2017.11] Backside Etching Process for Enhancing the Light Trapping Capacity and Electrical Properti...
	관리자
	
	
	2496
	2022-03-21




	

				
				

				

				

				

					
						

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