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[2018.05] Diminished band discontinuity at the p/i interface of narrow-gap a-SiGe:H solar cell by hydrogenated amorphous silicon oxide buffer layer
작성자: 관리자 조회: 1691 등록일: 2022-03-21
 
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  이전글  [2018.06] Improving the efficiency of rear emitter silicon solar cell using an optimized n-type silicon oxide front surface field layer
  다음글  [2018.05] Reduction in Photocurrent Loss and Improvement in Performance of Single Junction Solar Cell Due to Multistep Grading of Hydrogenated Amorphous Silicon Germanium Active Layer
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