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									[2018.05] Diminished band discontinuity at the p/i interface of narrow-gap a-SiGe:H solar cell by hydrogenated amorphous silicon oxide buffer layer
								

								

									
										

											

												작성자: 관리자
												
																																					조회: 2357													등록일: 2022-03-21												
											

																					

											
								

								

									
								

								

								
									

									

									
									
										
							

							

								
						

						

							
				

				

					
						

							

								
									

									

										
												
												
											

									

										
							

						

							
				

			

				
	

	

		
			
			

        

         
      

				

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					  이전글
					 [2018.06] Improving the efficiency of rear emitter silicon solar cell using an optimized n-type silicon oxide front surface field layer
				

				

					   다음글
					 [2018.05] Reduction in Photocurrent Loss and Improvement in Performance of Single Junction Solar Cell Due to Multistep Grading of Hydrogenated Amorphous Silicon Germanium Active Layer
				

				

				

			

				
	

	

		
			

				
				

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	[2013.10] Si-rich SiNx rear passivated c-Si solar cell with a novel antimony Local Back Surface Fiel...
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	[2013.10] Rear-side passivation characteristics of Si-rich SiNx for various Local Back Contact solar...
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	[2013.10] Processed optimization for excellent interface passivation quality of amorphous/crystallin...
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	[2013.10] Inserted Layer of AZO Thin Film with High Work Function Between Transparent Conductive Oxi...
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	[2013.09] Influence of laser power on POCl3 diffused back surface field on n-type PERT silicon solar...
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	74
	
	[2013.08] High-Efficiency Heterojunction with Intrinsic Thin-Layer Solar Cells: A Review
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