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[2013.08] Light trapping scheme of ICP-RIE glass texturing by SF6/Ar plasma for high haze ratio
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  이전글  [2013.08] Bias–stress-induced threshold voltage shift dependence of negative charge trapping in the amorphous indium tin zinc oxide thin-film transistors
  다음글  [2013.08] High field-effect mobility amorphous InSnZnO thin-film transistors with low carrier concentration and oxygen vacancy
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