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									[2019.05] Effects of post-metallisation annealing on surface–interfacial and electrical properties of HfO2/Ge stacks modified in situ with SiO2 interfacial layer
								

								

									
										

											

												작성자: 관리자
												
																																					조회: 2219													등록일: 2022-03-21												
											

																					

											
								

								

									
								

								

								
									

									

									
									
										
							

							

								
						

						

							
				

				

					
						

							

								
									

									

										
												
												
											

									

										
							

						

							
				

			

				
	

	

		
			
			

        

         
      

				

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					  이전글
					 [2019.05] Electrical and Structural Characteristics of Excimer Laser-Crystallized Polycrystalline Si1-xGex Thin-Film Transistors
				

				

					   다음글
					 [2019.05] The Characteristics of Transparent Non-Volatile Memory Devices Employing Si-Rich SiOX as a Charge Trapping Layer and Indium-Tin-Zinc-Oxide
				

				

				

			

				
	

	

		
			

				
				

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	88
	
	[2013.11] Interfacial barrier height modification of indium tin oxide/a-Si:H(p) via control of densi...
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	[2013.11] Improvement of haze ratio of DC (direct current)-sputtered ZnO:Al thin films through HF (h...
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	1521
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	86
	
	[2013.11] Direct Metallization Local Al-Back Surface Field for High Efficiency Screen Printed Crysta...
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	1542
	2022-03-18




	


	85
	
	[2013.11] A buffer-layer/a-SiOx:H(p) window-layer optimization for thin film amorphous silicon based...
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	1677
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	84
	
	[2013.10] Light management and efficient carrier generation with a highly transparent window layer f...
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	1570
	2022-03-18




	


	83
	
	[2013.10] Carrier Injection Related Stability of Intrinsic Hydrogenated Amorphous Silicon Film and S...
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	1615
	2022-03-18




	


	82
	
	[2013.10] Suppression of temperature instability in InGaZnO thin-film transistors by in situ nitroge...
	관리자
	
	
	1556
	2022-03-18




	


	81
	
	[2013.10] Diffused transmission and texture-induced defect with transparent conducting oxide front e...
	관리자
	
	
	1569
	2022-03-18




	


	80
	
	[2013.10] Si-rich SiNx rear passivated c-Si solar cell with a novel antimony Local Back Surface Fiel...
	관리자
	
	
	1653
	2022-03-18




	


	79
	
	[2013.10] Rear-side passivation characteristics of Si-rich SiNx for various Local Back Contact solar...
	관리자
	
	
	1553
	2022-03-18




	


	78
	
	[2013.10] Processed optimization for excellent interface passivation quality of amorphous/crystallin...
	관리자
	
	
	1630
	2022-03-18




	


	77
	
	[2013.10] Inserted Layer of AZO Thin Film with High Work Function Between Transparent Conductive Oxi...
	관리자
	
	
	1742
	2022-03-18




	


	76
	
	[2013.10] Growth Control of Carbon Nanotubes Using by Anodic Aluminum Oxide Nano Templates
	관리자
	
	
	1696
	2022-03-18




	


	75
	
	[2013.09] Influence of laser power on POCl3 diffused back surface field on n-type PERT silicon solar...
	관리자
	
	
	1650
	2022-03-18




	


	74
	
	[2013.08] High-Efficiency Heterojunction with Intrinsic Thin-Layer Solar Cells: A Review
	관리자
	
	
	1636
	2022-03-18




	

				
				

				

				

				

					
						

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