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									[2013.08] Bias–stress-induced threshold voltage shift dependence of negative charge trapping in the amorphous indium tin zinc oxide thin-film transistors
								

								

									
										

											

												작성자: 관리자
												
																																					조회: 1654													등록일: 2022-03-18												
											

																					

											
								

								

									
								

								

								
									

									

									
									
										
							

							

								
						

						

							
				

				

					
						

							

								
									

									

										
												
												
											

									

										
							

						

							
				

			

				
	

	

		
			
			

        

         
      

				

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					  이전글
					 [2013.08] Poly-silicon thin-film transistors without active layer pattern for high current performance with large operational range
				

				

					   다음글
					 [2013.08] Light trapping scheme of ICP-RIE glass texturing by SF6/Ar plasma for high haze ratio
				

				

				

			

				
	

	

		
			

				
				

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	58
	
	[2013.05] Effect of the short collection length in silicon microscale wire solar cells
	관리자
	
	
	1625
	2022-03-18




	


	57
	
	[2013.04] Trapping Time Characteristics of Carriers in a-InGaZnO Thin-Film Transistors Fabricated at...
	관리자
	
	
	1509
	2022-03-18




	


	56
	
	[2013.03] Improvement of mechanical reliability by patterned silver/Indium-Tin-Oxide structure for f...
	관리자
	
	
	1607
	2022-03-18




	


	55
	
	[2013.02] Negative gate-bias temperature stability of N-doped InGaZnO active-layer thin-film transis...
	관리자
	
	
	1625
	2022-03-18




	


	54
	
	[2013.02] Improvement of memory window and retention with low trap density in hydrogenated-amorphous...
	관리자
	
	
	1625
	2022-03-18




	


	53
	
	[2012.12] Effect of p-type a-SiO: H buffer layer at the interface of TCO and p-type layer in hydroge...
	관리자
	
	
	1715
	2022-03-18




	


	52
	
	[2012.11] Investigation of antimony diffusion for a local back surface field with laser-fired contac...
	관리자
	
	
	1592
	2022-03-18




	


	51
	
	[2012.11] Effect of ultraviolet light exposure to boron doped hydrogenated amorphous silicon oxide t...
	관리자
	
	
	1576
	2022-03-18




	


	50
	
	[2012.10] UV laser direct texturing for high efficiency multicrystalline silicon solar cell
	관리자
	
	
	1616
	2022-03-18




	


	49
	
	[2012.10] Effective light management of three-dimensionally patterned transparent conductive oxide l...
	관리자
	
	
	1654
	2022-03-18




	


	48
	
	[2012.10] Investigation of charge storage and retention characteristics of silicon nitride in NVM ba...
	관리자
	
	
	1633
	2022-03-18




	


	47
	
	[2012.09] High mobility P-channel thin-film transistors with ultralarge-grain polycrystalline silico...
	관리자
	
	
	1621
	2022-03-18




	


	46
	
	[2012.09] Effectiveness of iodine termination for ultrahigh efficiency solar cells as a means of che...
	관리자
	
	
	1585
	2022-03-18




	


	45
	
	[2012.08] Novel vapor texturing method for EFG silicon solar cell applications
	관리자
	
	
	1650
	2022-03-18




	


	44
	
	[2012.08] Enhancement of electrical stability of a-IGZO TFTs by improving the surface morphology and...
	관리자
	
	
	1603
	2022-03-18




	

				
				

				

				

				

					
						

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