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[2019.05] The Characteristics of Transparent Non-Volatile Memory Devices Employing Si-Rich SiOX as a Charge Trapping Layer and Indium-Tin-Zinc-Oxide
작성자: 관리자 조회: 1455 등록일: 2022-03-21
 
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  이전글  [2019.05] Effects of post-metallisation annealing on surface–interfacial and electrical properties of HfO2/Ge stacks modified in situ with SiO2 interfacial layer
  다음글  [2019.05] The recorded open-circuit voltage and fill factor achievement of a-Si:H p-i-n/HIT-type tandem solar cells by tuning up the crystalline in tunneling recombination junction layer
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