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									[2013.08] Bias–stress-induced threshold voltage shift dependence of negative charge trapping in the amorphous indium tin zinc oxide thin-film transistors
								

								

									
										

											

												작성자: 관리자
												
																																					조회: 1735													등록일: 2022-03-18												
											

																					

											
								

								

									
								

								

								
									

									

									
									
										
							

							

								
						

						

							
				

				

					
						

							

								
									

									

										
												
												
											

									

										
							

						

							
				

			

				
	

	

		
			
			

        

         
      

				

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					 [2013.08] Poly-silicon thin-film transistors without active layer pattern for high current performance with large operational range
				

				

					   다음글
					 [2013.08] Light trapping scheme of ICP-RIE glass texturing by SF6/Ar plasma for high haze ratio
				

				

				

			

				
	

	

		
			

				
				

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