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									[2015.06] High performance non-volatile memory with the control of charge trapping states in an amorphous InSnZnO active channel
								

								

									
										

											

												작성자: 관리자
												
																																					조회: 1720													등록일: 2022-03-21												
											

																					

											
								

								

									
								

								

								
									

									

									
									
										
							

							

								
						

						

							
				

				

					
						

							

								
									

									

										
												
												
											

									

										
							

						

							
				

			

				
	

	

		
			
			

        

         
      

				

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					  이전글
					 [2015.06] Source/drain metallization effects on the specific contact resistance of indium tin zinc oxide thin film transistors
				

				

					   다음글
					 [2015.05] n-type hydrogenated microcrystalline silicon/indium tin oxide back-reflector interfacial characterization for micromorph tandem solar cell applications
				

				

				

			

				
	

	

		
			

				
				

					번호
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	193
	
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	[2016.12] Thermal batteries with ceramic felt separators – Part 2: Ionic conductivity, electro...
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	189
	
	[2016.11] Enhanced electrical properties of oxide semiconductor thin-film transistors with high cond...
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	2441
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	188
	
	[2016.11] Fabrication and Characteristics of High Mobility InSnZnO Thin Film Transistors
	관리자
	
	
	2208
	2022-03-21




	


	187
	
	[2016.11] Development of p-Type Nano Crystalline Si Film for Electrical Contact Layer with the Front...
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	2210
	2022-03-21




	


	186
	
	[2016.11] Determination of Optical Band Gap and Germanium Content of Hydrogenated Micro-Crystalline ...
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	2270
	2022-03-21




	


	185
	
	[2016.11] Application of PCBM Layer as a Back Reflector of Micromorph Tandem Silicon Solar Cells
	관리자
	
	
	2341
	2022-03-21




	


	184
	
	[2016.11] Al2O3/SiON stack layers for effective surface passivation and anti-reflection of high effi...
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	2245
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	183
	
	[2016.11] Advances in Surface Passivation Schemes for High Efficiency c-Silicon Solar Cells
	관리자
	
	
	2401
	2022-03-21




	


	182
	
	[2016.10] Improved Data Retention of InSnZnO Nonvolatile Memory by H2O2 Treated Al2O3 Tunneling Laye...
	관리자
	
	
	2237
	2022-03-21




	


	181
	
	[2016.10] Bias-induced instability in an intrinsic hydrogenated amorphous silicon layer for thin-fil...
	관리자
	
	
	2328
	2022-03-21




	


	180
	
	[2016.08] Silicon germanium active layer with graded band gap and µc-Si:H buffer layer for high...
	관리자
	
	
	2152
	2022-03-21




	


	179
	
	[2016.07] Surface passivation of boron emitters on n-type c-Si solar cells using silicon dioxide and...
	관리자
	
	
	2296
	2022-03-21




	

				
				

				

				

				

					
						

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