홈home > PUBLICATION > International

 
[2020.07] Comparative study of aluminum and nickel contact electrodes for indium–tin–zinc oxide thin film transistors using oxygen vacancy diffusion model
작성자: 관리자 조회: 1709 등록일: 2022-03-21
 
댓글 : 0
  이전글  [2020.07] Si-embedded metal oxide transparent solar cells
  다음글  [2020.07] Effect of IGZO thin films fabricated by Pulsed-DC and RF sputtering on TFT characteristics
번호 제목 작성자 조회수 작성일
193 [2017.04] Fabrication of honeycomb textured glass substrate and nanotexturing of zinc oxide front el... 관리자 1388 2022-03-21
192 [2017.04] Investigation of 3-dimensional structural morphology for enhancing light trapping with con... 관리자 1355 2022-03-21
191 [2017.02] Role of a-Si:H buffer layer at the p/i interface and band gap profiling of the absorption ... 관리자 1362 2022-03-21
190 [2016.12] Thermal batteries with ceramic felt separators – Part 2: Ionic conductivity, electro... 관리자 1414 2022-03-21
189 [2016.11] Enhanced electrical properties of oxide semiconductor thin-film transistors with high cond... 관리자 1501 2022-03-21
188 [2016.11] Fabrication and Characteristics of High Mobility InSnZnO Thin Film Transistors 관리자 1406 2022-03-21
187 [2016.11] Development of p-Type Nano Crystalline Si Film for Electrical Contact Layer with the Front... 관리자 1415 2022-03-21
186 [2016.11] Determination of Optical Band Gap and Germanium Content of Hydrogenated Micro-Crystalline ... 관리자 1435 2022-03-21
185 [2016.11] Application of PCBM Layer as a Back Reflector of Micromorph Tandem Silicon Solar Cells 관리자 1406 2022-03-21
184 [2016.11] Al2O3/SiON stack layers for effective surface passivation and anti-reflection of high effi... 관리자 1494 2022-03-21
183 [2016.11] Advances in Surface Passivation Schemes for High Efficiency c-Silicon Solar Cells 관리자 1518 2022-03-21
182 [2016.10] Improved Data Retention of InSnZnO Nonvolatile Memory by H2O2 Treated Al2O3 Tunneling Laye... 관리자 1447 2022-03-21
181 [2016.10] Bias-induced instability in an intrinsic hydrogenated amorphous silicon layer for thin-fil... 관리자 1513 2022-03-21
180 [2016.08] Silicon germanium active layer with graded band gap and µc-Si:H buffer layer for high... 관리자 1387 2022-03-21
179 [2016.07] Surface passivation of boron emitters on n-type c-Si solar cells using silicon dioxide and... 관리자 1428 2022-03-21
11 | 12 | 13 | 14 | 15 | 16 | 17 | 18 | 19 | 20