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									[2015.06] High performance non-volatile memory with the control of charge trapping states in an amorphous InSnZnO active channel
								

								

									
										

											

												작성자: 관리자
												
																																					조회: 1704													등록일: 2022-03-21												
											

																					

											
								

								

									
								

								

								
									

									

									
									
										
							

							

								
						

						

							
				

				

					
						

							

								
									

									

										
												
												
											

									

										
							

						

							
				

			

				
	

	

		
			
			

        

         
      

				

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					  이전글
					 [2015.06] Source/drain metallization effects on the specific contact resistance of indium tin zinc oxide thin film transistors
				

				

					   다음글
					 [2015.05] n-type hydrogenated microcrystalline silicon/indium tin oxide back-reflector interfacial characterization for micromorph tandem solar cell applications
				

				

				

			

				
	

	

		
			

				
				

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	178
	
	[2016.07] Role of SiOxNy surface passivation layer on stability improvement and kink effect reductio...
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	2187
	2022-03-21




	


	177
	
	[2016.05] The effect of small pyramid texturing on the enhanced passivation and efficiency of single...
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	2215
	2022-03-21




	


	176
	
	[2016.05] Influence of Oxygen Gas Ratio on the Properties of Aluminum-Doped Zinc Oxide Films Prepare...
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	2091
	2022-03-21




	


	175
	
	[2016.05] Improvement in Front-Contact Resistance and Interface Passivation of Heterojunction Amorph...
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	1712
	2022-03-21




	


	174
	
	[2016.05] Optimization of CdS Buffer Layer for High Efficiency CIGS Solar Cells
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	1780
	2022-03-21




	


	173
	
	[2016.05] Method for Fabricating Textured High-Haze ZnO:Al Transparent Conduction Oxide Films on Che...
	관리자
	
	
	1639
	2022-03-21




	


	172
	
	[2016.05] Improving Memory Characteristics of Hydrogenated Nanocrystalline Silicon Germanium Nonvola...
	관리자
	
	
	1589
	2022-03-21




	


	171
	
	[2016.05] Hydrogenated Amorphous Silicon Germanium Active Layer for Top Cell of a Multi Junction Cel...
	관리자
	
	
	1588
	2022-03-21




	


	170
	
	[2016.05] Fabrication of InGaZnO Nonvolatile Memory Devices at Low Temperature of 150 °C for Applic...
	관리자
	
	
	1569
	2022-03-21




	


	169
	
	[2016.05] Enhanced Haze Ratio on Glass by Novel Vapor Texturing Method
	관리자
	
	
	1509
	2022-03-21




	


	168
	
	[2016.05] Effects of Low Temperature Anneal on the Interface Properties of Thermal Silicon Oxide for...
	관리자
	
	
	1593
	2022-03-21




	


	167
	
	[2016.05] Effective Light Trapping in Thin Film Silicon Solar Cells with Nano- and Microscale Struct...
	관리자
	
	
	1593
	2022-03-21




	


	166
	
	[2016.05] Boron Oxygen Pair Effect in p+ Emitter and Nanosized Boron Rich Layer by Fold Coordination...
	관리자
	
	
	1526
	2022-03-21




	


	165
	
	[2016.03] Dislocation and Saturation Current Density Analysis by Rear-Side Al Amount Variation for n...
	관리자
	
	
	1702
	2022-03-21




	


	164
	
	[2016.03] Analysis of Electrical Properties Variation by Phosphorus-Diffused Layer Profile Shape and...
	관리자
	
	
	1803
	2022-03-21




	

				
				

				

				

				

					
						

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