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[2019.12] Influence of Ultra-Thin Ge3N4 Passivation Layer on Structural, Interfacial, and Electrical Properties of HfO2/Ge Metal-Oxide–Semiconductor Devices
작성자: 관리자 조회: 2089 등록일: 2022-03-21
 
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  이전글  [2019.12] High Haze Ratio-Based ITO Films Prepared on Periodic Textured Glass Surfaces for Thin Film Solar Cells
  다음글  [2019.12] Effect on the reduction of the barrier height in rear-emitter silicon heterojunction solar cells using Ar plasma-treated ITO film
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