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[2013.08] Poly-silicon thin-film transistors without active layer pattern for high current performance with large operational range
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  ÀÌÀü±Û  [2013.08] Optimization of PECVD–ONO rear surface passivation layer through improved electrical property and thermal stability
  ´ÙÀ½±Û  [2013.08] Bias–stress-induced threshold voltage shift dependence of negative charge trapping in the amorphous indium tin zinc oxide thin-film transistors
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