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[2013.02] Improvement of memory window and retention with low trap density in hydrogenated-amorphous-silicon-germanium nonvolatile memory
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  ÀÌÀü±Û  [2013.02] Negative gate-bias temperature stability of N-doped InGaZnO active-layer thin-film transistors
  ´ÙÀ½±Û  [2012.12] Effect of p-type a-SiO: H buffer layer at the interface of TCO and p-type layer in hydrogenated amorphous silicon solar cells
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