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									[2019.05] The recorded open-circuit voltage and fill factor achievement of a-Si:H p-i-n/HIT-type tandem solar cells by tuning up the crystalline in tunneling recombination junction layer
								

								

									
										

											

												작성자: 관리자
												
																																					조회: 1411													등록일: 2022-03-21												
											

																					

											
								

								

									
								

								

								
									

									

									
									
										
							

							

								
						

						

							
				

				

					
						

							

								
									

									

										
												
												
											

									

										
							

						

							
				

			

				
	

	

		
			
			

        

         
      

				

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					  이전글
					 [2019.05] The Characteristics of Transparent Non-Volatile Memory Devices Employing Si-Rich SiOX as a Charge Trapping Layer and Indium-Tin-Zinc-Oxide
				

				

					   다음글
					 [2019.04] High-Efficiency Photo-Generated Charges of ZnO/TiO2 Heterojunction Thin Films for Photocatalytic and Antibacterial Performance
				

				

				

			

				
	

	

		
			

				
				

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	208
	
	[2019.04] Damage to passivation contact in silicon heterojunction solar cells by ITO sputtering unde...
	관리자
	
	
	1389
	2022-03-21




	


	207
	
	[2017.04] Fabrication of honeycomb textured glass substrate and nanotexturing of zinc oxide front el...
	관리자
	
	
	1388
	2022-03-21




	


	206
	
	[2018.12] Highly Transparency and High Mobility Bilayer Aluminum Doped Zinc Oxide Films on Periodic ...
	관리자
	
	
	1387
	2022-03-21




	


	205
	
	[2017.08] Improved efficiency of perovskite-silicon tandem solar cell near the matched optical absor...
	관리자
	
	
	1386
	2022-03-21




	


	204
	
	[2016.08] Silicon germanium active layer with graded band gap and µc-Si:H buffer layer for high...
	관리자
	
	
	1383
	2022-03-21




	


	203
	
	[2018.10] High Efficiency Inorganic/Inorganic Amorphous Silicon/Heterojunction Silicon Tandem Solar ...
	관리자
	
	
	1379
	2022-03-21




	


	202
	
	[2016.07] Role of SiOxNy surface passivation layer on stability improvement and kink effect reductio...
	관리자
	
	
	1357
	2022-03-21




	


	201
	
	[2017.02] Role of a-Si:H buffer layer at the p/i interface and band gap profiling of the absorption ...
	관리자
	
	
	1357
	2022-03-21




	


	200
	
	[2017.04] Investigation of 3-dimensional structural morphology for enhancing light trapping with con...
	관리자
	
	
	1353
	2022-03-21




	


	199
	
	[2016.05] The effect of small pyramid texturing on the enhanced passivation and efficiency of single...
	관리자
	
	
	1350
	2022-03-21




	


	198
	
	[2019.02] Structure and electrical properties of boron doped hydrogenated mixed-phase silicon films ...
	관리자
	
	
	1350
	2022-03-21




	


	197
	
	[2019.02] Ultra-thin stack of n-type hydrogenated microcrystalline silicon and silicon oxide front c...
	관리자
	
	
	1349
	2022-03-21




	


	196
	
	[2018.10] Molybdenum oxide: A superior hole extraction layer for replacing p-type hydrogenated amorp...
	관리자
	
	
	1346
	2022-03-21




	


	195
	
	[2019.03] Investigation of p-type nanocrystalline silicon oxide thin film prepared at various growth...
	관리자
	
	
	1310
	2022-03-21




	


	194
	
	[2016.05] Influence of Oxygen Gas Ratio on the Properties of Aluminum-Doped Zinc Oxide Films Prepare...
	관리자
	
	
	1286
	2022-03-21




	

				
				

				

				

				

					
						

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