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[2021.12] Improvement of the Charge Retention of a Non-Volatile Memory by a Bandgap-Engineered Charge Trap Layer
작성자: 관리자 조회: 4482 등록일: 2022-03-21
 
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180 [2012.12] Effect of p-type a-SiO: H buffer layer at the interface of TCO and p-type layer in hydroge... 관리자 1378 2022-03-18
179 [2015.12] Current transport studies of amorphous n/p junctions and its application in a-Si:H/HIT-typ... 관리자 1378 2022-03-21
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