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[2013.02] Improvement of memory window and retention with low trap density in hydrogenated-amorphous-silicon-germanium nonvolatile memory
작성자: 관리자 조회: 1078 등록일: 2022-03-18
 
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  이전글  [2013.02] Negative gate-bias temperature stability of N-doped InGaZnO active-layer thin-film transistors
  다음글  [2012.12] Effect of p-type a-SiO: H buffer layer at the interface of TCO and p-type layer in hydrogenated amorphous silicon solar cells
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160 [2012.04] Spectroscopic ellipsometry analysis of amorphous silicon thin films for Si-nanocrystals 관리자 1109 2022-03-14
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157 [2013.08] Optimization of PECVD–ONO rear surface passivation layer through improved electrical... 관리자 1106 2022-03-18
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153 [2014.12] In and Ga Codoped ZnO Film as a Front Electrode for Thin Film Silicon Solar Cells 관리자 1099 2022-03-21
152 [2012.09] High mobility P-channel thin-film transistors with ultralarge-grain polycrystalline silico... 관리자 1098 2022-03-18
151 [2015.01] Improvement of data retention characteristics of OSOSO multi-stacked MIS capacitor for fla... 관리자 1097 2022-03-21
150 [2012.10] Effective light management of three-dimensionally patterned transparent conductive oxide l... 관리자 1095 2022-03-18
149 [2014.11] Incident light adjustable solar cell by periodic nanolens architecture 관리자 1095 2022-03-21
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