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[2013.08] Bias–stress-induced threshold voltage shift dependence of negative charge trapping in the amorphous indium tin zinc oxide thin-film transistors
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  이전글  [2013.08] Poly-silicon thin-film transistors without active layer pattern for high current performance with large operational range
  다음글  [2013.08] Light trapping scheme of ICP-RIE glass texturing by SF6/Ar plasma for high haze ratio
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