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[2015.06] High performance non-volatile memory with the control of charge trapping states in an amorphous InSnZnO active channel
작성자: 관리자 조회: 1356 등록일: 2022-03-21
 
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  이전글  [2015.06] Source/drain metallization effects on the specific contact resistance of indium tin zinc oxide thin film transistors
  다음글  [2015.05] n-type hydrogenated microcrystalline silicon/indium tin oxide back-reflector interfacial characterization for micromorph tandem solar cell applications
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148 [2013.05] Effects of LiF/Al back electrode on the amorphous/crystalline silicon heterojunction solar... 관리자 1358 2022-03-18
147 [2014.05] RF magnetron sputtered ITO:Zr thin films for the high efficiency a-Si:H/c-Si heterojunctio... 관리자 1358 2022-03-18
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[2015.06] High performance non-volatile memory with the control of charge trapping states in an amor... 관리자 1357 2022-03-21
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137 [2013.10] Carrier Injection Related Stability of Intrinsic Hydrogenated Amorphous Silicon Film and S... 관리자 1352 2022-03-18
136 [2013.08] Bias–stress-induced threshold voltage shift dependence of negative charge trapping i... 관리자 1351 2022-03-18
135 [2015.02] Investigation of Electrical and Optical Properties of Highly Transparent TCO/Ag/TCO Multil... 관리자 1351 2022-03-21
134 [2015.02] Uniform 3D hydrothermally deposited zinc oxide nanorods with high haze ratio 관리자 1351 2022-03-21
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