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[2012.09] High mobility P-channel thin-film transistors with ultralarge-grain polycrystalline silicon formed using nickel-induced crystallization
작성자: 관리자 조회: 1341 등록일: 2022-03-18
 
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  이전글  [2012.10] Investigation of charge storage and retention characteristics of silicon nitride in NVM based on InGaZnO channels for system-on-panel applications
  다음글  [2012.09] Effectiveness of iodine termination for ultrahigh efficiency solar cells as a means of chemical surface passivation
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148 [2013.11] A buffer-layer/a-SiOx:H(p) window-layer optimization for thin film amorphous silicon based... 관리자 1345 2022-03-18
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146 [2013.10] Carrier Injection Related Stability of Intrinsic Hydrogenated Amorphous Silicon Film and S... 관리자 1344 2022-03-18
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[2012.09] High mobility P-channel thin-film transistors with ultralarge-grain polycrystalline silico... 관리자 1342 2022-03-18
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137 [2015.02] Uniform 3D hydrothermally deposited zinc oxide nanorods with high haze ratio 관리자 1336 2022-03-21
136 [2011.02] Improving the ethanol sensing of ZnO nano-particle thin films-The correlation between the ... 관리자 1335 2022-03-11
135 [2013.10] Processed optimization for excellent interface passivation quality of amorphous/crystallin... 관리자 1335 2022-03-18
134 [2014.11] Incident light adjustable solar cell by periodic nanolens architecture 관리자 1335 2022-03-21
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