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[2015.06] High performance non-volatile memory with the control of charge trapping states in an amorphous InSnZnO active channel
작성자: 관리자 조회: 1349 등록일: 2022-03-21
 
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  이전글  [2015.06] Source/drain metallization effects on the specific contact resistance of indium tin zinc oxide thin film transistors
  다음글  [2015.05] n-type hydrogenated microcrystalline silicon/indium tin oxide back-reflector interfacial characterization for micromorph tandem solar cell applications
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