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[2011.08] Fabrication of SiO2/SiOx/SiOxNy Non-Volatile Memory with Transparent Amorphous Indium Gallium Zinc Oxide Channels
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  이전글  [2011.08] SiNx Double Layer Antireflection Coating by Plasma-Enhanced Chemical Vapor Deposition for Single Crystalline Silicon Solar Cells
  다음글  [2011.08] Electrical mechanism analysis of Al2O3 doped zinc oxide thin films deposited by rotating cylindrical DC magnetron sputtering
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