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[2012.10] Investigation of charge storage and retention characteristics of silicon nitride in NVM based on InGaZnO channels for system-on-panel applications
작성자: 관리자 조회: 1065 등록일: 2022-03-18
 
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  이전글  [2012.10] Effective light management of three-dimensionally patterned transparent conductive oxide layers
  다음글  [2012.09] High mobility P-channel thin-film transistors with ultralarge-grain polycrystalline silicon formed using nickel-induced crystallization
번호 제목 작성자 조회수 작성일
88 [2012.08] Novel vapor texturing method for EFG silicon solar cell applications 관리자 1074 2022-03-18
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86 [2014.12] Study of Low Resistivity and High Work Function ITO Films Prepared by Oxygen Flow Rates an... 관리자 1074 2022-03-21
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81 [2013.11] Random reactive ion etching texturing techniques for application of multicrystalline silic... 관리자 1070 2022-03-18
80 [2015.10] Correlation Between the Raman Crystallinity of p-Type Micro-Crystalline Silicon Layer and ... 관리자 1069 2022-03-21
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[2012.10] Investigation of charge storage and retention characteristics of silicon nitride in NVM ba... 관리자 1066 2022-03-18
77 [2013.02] Negative gate-bias temperature stability of N-doped InGaZnO active-layer thin-film transis... 관리자 1066 2022-03-18
76 [2015.02] Analysis of Electrical Properties Variation by Phosphorus-Diffused Layer Profile Shape and... 관리자 1066 2022-03-21
75 [2012.01] Interface modification effect between p-type a-SiC: H and ZnO: Al in pin amorphous silicon... 관리자 1065 2022-03-14
74 [2012.09] Effectiveness of iodine termination for ultrahigh efficiency solar cells as a means of che... 관리자 1065 2022-03-18
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