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[2013.02] Negative gate-bias temperature stability of N-doped InGaZnO active-layer thin-film transistors
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  이전글  [2013.03] Improvement of mechanical reliability by patterned silver/Indium-Tin-Oxide structure for flexible electronic devices
  다음글  [2013.02] Improvement of memory window and retention with low trap density in hydrogenated-amorphous-silicon-germanium nonvolatile memory
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