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[2011.08] Fabrication of SiO2/SiOx/SiOxNy Non-Volatile Memory with Transparent Amorphous Indium Gallium Zinc Oxide Channels
작성자: 관리자 조회: 1213 등록일: 2022-03-11
 
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  이전글  [2011.08] SiNx Double Layer Antireflection Coating by Plasma-Enhanced Chemical Vapor Deposition for Single Crystalline Silicon Solar Cells
  다음글  [2011.08] Electrical mechanism analysis of Al2O3 doped zinc oxide thin films deposited by rotating cylindrical DC magnetron sputtering
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17 [2013.11] Improvement of haze ratio of DC (direct current)-sputtered ZnO:Al thin films through HF (h... 관리자 1204 2022-03-18
16 [2013.11] Si-Related Solar Cells for a Low Cost and High Efficiency 2013 관리자 1188 2022-03-18
15 [2016.05] Enhanced Haze Ratio on Glass by Novel Vapor Texturing Method 관리자 1171 2022-03-21
14 [2015.03] Transparent conductor-embedding nanocones for selective emitters: optical and electrical i... 관리자 1170 2022-03-21
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