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[2016.10] Improved Data Retention of InSnZnO Nonvolatile Memory by H2O2 Treated Al2O3 Tunneling Layer: A Cost-Effective Method
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  이전글  [2016.11] Advances in Surface Passivation Schemes for High Efficiency c-Silicon Solar Cells
  다음글  [2016.10] Bias-induced instability in an intrinsic hydrogenated amorphous silicon layer for thin-film solar cells
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