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[2019.05] The Characteristics of Transparent Non-Volatile Memory Devices Employing Si-Rich SiOX as a Charge Trapping Layer and Indium-Tin-Zinc-Oxide
ÀÛ¼ºÀÚ: °ü¸®ÀÚ Á¶È¸: 2350 µî·ÏÀÏ: 2022-03-21
 
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  ÀÌÀü±Û  [2019.05] Effects of post-metallisation annealing on surface–interfacial and electrical properties of HfO2/Ge stacks modified in situ with SiO2 interfacial layer
  ´ÙÀ½±Û  [2019.05] The recorded open-circuit voltage and fill factor achievement of a-Si:H p-i-n/HIT-type tandem solar cells by tuning up the crystalline in tunneling recombination junction layer
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¢Ñ [2019.05] The Characteristics of Transparent Non-Volatile Memory Devices Employing Si-Rich SiOX as a... °ü¸®ÀÚ 2351 2022-03-21
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