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									[2019.12] Influence of Ultra-Thin Ge3N4 Passivation Layer on Structural, Interfacial, and Electrical Properties of HfO2/Ge Metal-Oxide–Semiconductor Devices
								

								

									
										

											

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																																					조회: 2709													등록일: 2022-03-21												
											

																					

											
								

								

									
								

								

								
									

									

									
									
										
							

							

								
						

						

							
				

				

					
						

							

								
									

									

										
												
												
											

									

										
							

						

							
				

			

				
	

	

		
			
			

        

         
      

				

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					  이전글
					 [2019.12] High Haze Ratio-Based ITO Films Prepared on Periodic Textured Glass Surfaces for Thin Film Solar Cells
				

				

					   다음글
					 [2019.12] Effect on the reduction of the barrier height in rear-emitter silicon heterojunction solar cells using Ar plasma-treated ITO film
				

				

				

			

				
	

	

		
			

				
				

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	140
	
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