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[2016.05] Hydrogenated Amorphous Silicon Germanium Active Layer for Top Cell of a Multi Junction Cell Structure
작성자: 관리자 조회: 1241 등록일: 2022-03-21
 
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  이전글  [2016.05] Improving Memory Characteristics of Hydrogenated Nanocrystalline Silicon Germanium Nonvolatile Memory Devices by Controlling Germanium Contents
  다음글  [2016.05] Fabrication of InGaZnO Nonvolatile Memory Devices at Low Temperature of 150 °C for Applications in Flexible Memory Displays and Transparency Coating on Plastic Substrates
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