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[2016.08] Silicon germanium active layer with graded band gap and µc-Si:H buffer layer for high efficiency thin film solar cells
작성자: 관리자 조회: 1347 등록일: 2022-03-21
 
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  이전글  [2016.10] Bias-induced instability in an intrinsic hydrogenated amorphous silicon layer for thin-film solar cells
  다음글  [2016.07] Surface passivation of boron emitters on n-type c-Si solar cells using silicon dioxide and a PECVD silicon oxynitride stack
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[2016.08] Silicon germanium active layer with graded band gap and µc-Si:H buffer layer for high... 관리자 1348 2022-03-21
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230 [2019.12] In Situ Process to Form Passivated Tunneling Oxides for Front-Surface Field in Rear-Emitte... 관리자 1342 2022-03-21
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226 [2017.05] Development of highly conducting n-type micro-crystalline silicon oxide thin film and its ... 관리자 1335 2022-03-21
225 [2018.10] Effects of tunneling dielectrics formed by CO2 and N2O plasma-assisted oxidations on memor... 관리자 1335 2022-03-21
224 [2019.08] Insight into the adsorption mechanisms of methylene blue and chromium(III) from aqueous so... 관리자 1335 2022-03-21
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