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[2018.10] Gate-induced drain leakage current characteristics of p-type polycrystalline silicon thin film transistors aged by off-state stress
작성자: 관리자 조회: 1422 등록일: 2022-03-21
 
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  이전글  [2018.10] High-performing ultrafast transparent photodetector governed by the pyro–phototronic effect
  다음글  [2018.10] Efficient light trapping for maskless large area randomly textured glass structures with various haze ratios in silicon thin film solar cells
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